Articles producció científicaEnginyeria Electrònica, Elèctrica i Automàtica

A Compact DC Model for PEDOT-Based Organic Electrochemical Transistors (OECTs)

  • Datos identificativos

    Identificador:  imarina:9388758
    Autores:  González, B; Masip, L; Lázaro, M; Villarino, R; Girbau, D; Lázaro, A
    Resumen:
    In this article, a compact model of the dc characteristics of organic electrochemical transistors (OECTs) is proposed. Starting from the output characteristics, the transconductance in the saturation regime is modeled after the output conductance in the saturation regime is reduced to very low values. For this purpose, a previously justified integrable bell-shaped function is used, based on which the transfer characteristics in the saturation regime are determined. Since the drain current due to hopping diminishes in the linear regime, the model is based on the gradual channel approximation and constant hole mobility and gate capacitance at this regime. Six parameters are required for dc modeling, which can be obtained in a straightforward way from the transconductance and transfer characteristics in the saturation regime, and the output characteristics. A good agreement between the modeled and measured data is achieved. The proposed compact model stands out in terms of its simplicity and rapid determination of its parameters and can be easily incorporated into circuit simulators.
  • Otros:

    Enlace a la fuente original: https://ieeexplore.ieee.org/document/10706598
    Referencia de l'ítem segons les normes APA: González, B; Masip, L; Lázaro, M; Villarino, R; Girbau, D; Lázaro, A (2024). A Compact DC Model for PEDOT-Based Organic Electrochemical Transistors (OECTs). Ieee Transactions On Electron Devices, 71(11), 6983-6988. DOI: 10.1109/TED.2024.3469170
    Referencia al articulo segun fuente origial: Ieee Transactions On Electron Devices. 71 (11): 6983-6988
    DOI del artículo: 10.1109/TED.2024.3469170
    Año de publicación de la revista: 2024-11-01
    Entidad: Universitat Rovira i Virgili
    Versión del articulo depositado: info:eu-repo/semantics/publishedVersion
    Fecha de alta del registro: 2026-05-09
    Autor/es de la URV: Girbau Sala, David / Lázaro Guillén, Antonio Ramon / Lázaro Martí, Marc / Villarino Villarino, Ramón Maria
    Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
    URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
    Tipo de publicación: Journal Publications
    Autor según el artículo: González, B; Masip, L; Lázaro, M; Villarino, R; Girbau, D; Lázaro, A
    Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
    Áreas temáticas: Physics, applied, Engineering, electrical & electronic, Engenharias iv, Electronic, optical and magnetic materials, Electrical and electronic engineering, Ciência da computação, Astronomia / física
    Direcció de correo del autor: marc.lazaro@urv.cat, marc.lazaro@urv.cat, marc.lazaro@urv.cat, antonioramon.lazaro@urv.cat, antonioramon.lazaro@urv.cat, david.girbau@urv.cat, david.girbau@urv.cat, ramon.villarino@urv.cat, ramon.villarino@urv.cat
  • Palabras clave:

    Transistors
    Transconductance
    Standards
    Polymers
    Peak transconductance
    Peak transconductanc
    Organic electrochemical transistor (oect)
    Logic gates
    Integrated circuit modeling
    Fermi level
    Electrolytes
    Electrodes
    Devic
    Dc characterization
    Compact model
    Circuit simulator
    Capacitance
    Electrical and Electronic Engineering
    Electronic
    Optical and Magnetic Materials
    Engineering
    Electrical & Electronic
    Physics
    Applied
    Engenharias iv
    Ciência da computação
    Astronomia / física
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