Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

Device Physics, Modeling and Simulation of Organic Electrochemical Transistors

  • Dades identificatives

    Identificador: imarina:9441805
    Handle: https://hdl.handle.net/20.500.11797/imarina9441805
    Autors:
    Koch, MalteTseng, HsinWeissbach, AntonIniguez, BenjaminLeo, KarlKloes, AlexanderKleemann, HansDarbandy, Ghader
    Resum:
    In this work, we investigate organic electrochemical transistors (OECTs) as a novel artificial electronic device for the realization of synaptic behavior, bioelectronics, and a variety of applications. A numerical method considering the Poisson-Boltzmann statistics is introduced to reproduce associated charge densities, electrostatics and switching properties of OECTs. We shed light on the working principle of OECTs by taking into account the ionic charge distribution in the electrolyte and incomplete ionization of the organic semiconductor describing the underlying electrochemical redox reaction. This enables analyzing the OECTs electrical performance as well as a simplified chemical properties via an electrical double layer, doping and de-doping of the OMIEC layer. We have fabricated, characterized, simulated and analyzed OECTs based on PEDOT:PSS, and we show that the proposed model reveals important properties of the device's working mechanism. The model shows a good agreement with the experimental data of the fabricated devices.

  • Altres:

    Autor segons l'article: Koch, Malte; Tseng, Hsin; Weissbach, Anton; Iniguez, Benjamin; Leo, Karl; Kloes, Alexander; Kleemann, Hans; Darbandy, Ghader
    Departament: Enginyeria Electrònica, Elèctrica i Automàtica
    Autor/s de la URV: Iñiguez Nicolau, Benjamin
    Paraules clau: Capacitance Electrical double layer Electrolytes Ionization Logic gates Mathematical models Modeling Oects Semiconductor device measurement Semiconductor process modeling Simulatio Simulation Synaptic devices
    Resum: In this work, we investigate organic electrochemical transistors (OECTs) as a novel artificial electronic device for the realization of synaptic behavior, bioelectronics, and a variety of applications. A numerical method considering the Poisson-Boltzmann statistics is introduced to reproduce associated charge densities, electrostatics and switching properties of OECTs. We shed light on the working principle of OECTs by taking into account the ionic charge distribution in the electrolyte and incomplete ionization of the organic semiconductor describing the underlying electrochemical redox reaction. This enables analyzing the OECTs electrical performance as well as a simplified chemical properties via an electrical double layer, doping and de-doping of the OMIEC layer. We have fabricated, characterized, simulated and analyzed OECTs based on PEDOT:PSS, and we show that the proposed model reveals important properties of the device's working mechanism. The model shows a good agreement with the experimental data of the fabricated devices.
    Àrees temàtiques: Biotechnology Electrical and electronic engineering Electronic, optical and magnetic materials Engineering, electrical & electronic
    Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
    Adreça de correu electrònic de l'autor: benjamin.iniguez@urv.cat
    Identificador de l'autor: 0000-0002-6504-7980
    Data d'alta del registre: 2025-02-18
    Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
    Referència a l'article segons font original: Ieee Journal Of The Electron Devices Society. 11 665-671
    Referència de l'ítem segons les normes APA: Koch, Malte; Tseng, Hsin; Weissbach, Anton; Iniguez, Benjamin; Leo, Karl; Kloes, Alexander; Kleemann, Hans; Darbandy, Ghader (2023). Device Physics, Modeling and Simulation of Organic Electrochemical Transistors. Ieee Journal Of The Electron Devices Society, 11(), 665-671. DOI: 10.1109/JEDS.2023.3263278
    URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
    Entitat: Universitat Rovira i Virgili
    Any de publicació de la revista: 2023
    Tipus de publicació: Journal Publications

  • Paraules clau:

    Biotechnology,Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Engineering, Electrical & Electronic
    Capacitance
    Electrical double layer
    Electrolytes
    Ionization
    Logic gates
    Mathematical models
    Modeling
    Oects
    Semiconductor device measurement
    Semiconductor process modeling
    Simulatio
    Simulation
    Synaptic devices
    Biotechnology
    Electrical and electronic engineering
    Electronic, optical and magnetic materials
    Engineering, electrical & electronic

  • Documents:

    DocumentPrincipal

  • Cerca a google

    Search to google scholar