Articles producció científicaEnginyeria Electrònica, Elèctrica i Automàtica

A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs

  • Identification data

    Identifier:  PC:2599
    Handle: https://hdl.handle.net/20.500.11797/PC2599
    Authors:  Lime, F.; Ávila-Herrera, F.; Cerdeira, A.; Iñiguez, B.
    Abstract:
    In this paper we provide solutions to update a long channel model in order to take into account the short channel effects. The presented model is for the junctionless GAA MOSFETs. The resulting model is analytical, explicit and valid for depletion and accumulation regimes, and consists of simple physically based equations, for better understanding of this device, and also easier implementation and better computation speed as a compact model. The agreement with TCAD simulations is very good.

  • Others:

    Link to the original source: https://www.sciencedirect.com/science/article/abs/pii/S0038110117301077?via%3Dihub
    Article's DOI: 10.1016/j.sse.2017.02.004
    Journal publication year: 2017
    Entity: Universitat Rovira i Virgili
    Paper version: info:eu-repo/semantics/acceptedVersion
    Record's date: 2017-03-14
    First page: 24
    URV's Author/s: LIME, FRANÇOIS; Ávila-Herrera, F.; Cerdeira, A.; IÑIGUEZ NICOLAU, BENJAMIN
    Department: Enginyeria Electrònica, Elèctrica i Automàtica
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Publication Type: Article
    Last page: 29
    ISSN: 0038-1101
    Author, as appears in the article.: Lime, F.; Ávila-Herrera, F.; Cerdeira, A.; Iñiguez, B.
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    Journal volume: 131
    Research group: Nanoelectronic and Photonic Systems
    Thematic Areas: Electronic engineering

  • Keywords:

    gate-all-around (GAA) MOSFET
    drain current
    compact model

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