Author, as appears in the article.: Lime, F.; Ávila-Herrera, F.; Cerdeira, A.; Iñiguez, B.
Department: Enginyeria Electrònica, Elèctrica i Automàtica
URV's Author/s: LIME, FRANÇOIS; Ávila-Herrera, F.; Cerdeira, A.; IÑIGUEZ NICOLAU, BENJAMIN
Keywords: gate-all-around (GAA) MOSFET drain current compact model
Abstract: In this paper we provide solutions to update a long channel model in order to take into account the short channel effects. The presented model is for the junctionless GAA MOSFETs. The resulting model is analytical, explicit and valid for depletion and accumulation regimes, and consists of simple physically based equations, for better understanding of this device, and also easier implementation and better computation speed as a compact model. The agreement with TCAD simulations is very good.
Research group: Nanoelectronic and Photonic Systems
Thematic Areas: Electronic engineering Ingeniería electrónica Enginyeria electrònica
licence for use: https://creativecommons.org/licenses/by/3.0/es/
ISSN: 0038-1101
Author identifier: 0000-0002-1024-6480; n/a; n/a; 0000-0002-6504-7980
Record's date: 2017-03-14
Last page: 29
Journal volume: 131
Papper version: info:eu-repo/semantics/acceptedVersion
Link to the original source: https://www.sciencedirect.com/science/article/abs/pii/S0038110117301077?via%3Dihub
Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
Article's DOI: 10.1016/j.sse.2017.02.004
Entity: Universitat Rovira i Virgili
Journal publication year: 2017
First page: 24
Publication Type: Article Artículo Article
Repositori URV