Articles producció científicaQuímica Física i Inorgànica

Fully porous GaN p-n junctions fabricated by Chemical Vapor Deposition: a green technology towards more efficient LEDs

  • Identification data

    Identifier:  PC:2895
    Handle: https://hdl.handle.net/20.500.11797/PC2895
    Authors:  J. J. Carvajal; F. Díaz; M. Aguiló; J. Mena; O. V. Bilousov; O. Martínez; J. Jiménez; V.Z. Zubialevich; P.J. Parbrook; H. Geaney; C.O¿Dwyer
    Abstract:
    Porous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extraction efficiencies in th epast. However, these fabrication techniques require further postgrowth processing steps, which increase the price of the final device. In this paper, we review the process we developed for the formation of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction.

  • Others:

    Link to the original source: https://iopscience.iop.org/article/10.1149/06601.0163ecst
    Article's DOI: 10.1149/06601.0163ecst
    Funding program: altres; JCYL (VA293U13), altres; Grupos consolidados; 2014SGR1358, plan; RETOS; MAT2013-47395-C4-4-R, plan; Excelencia; MAT2011-29255-C02-02
    Journal publication year: 2015
    Entity: Universitat Rovira i Virgili
    Paper version: info:eu-repo/semantics/acceptedVersion
    Record's date: 2017-05-31
    First page: 163
    URV's Author/s: CARVAJAL MARTÍ, JOAN JOSEP; DÍAZ GONZÁLEZ, FRANCISCO MANUEL; AGUILÓ DÍAZ, MAGDALENA; J. Mena; O. V. Bilousov; O. Martínez; J. Jiménez; V.Z. Zubialevich; P.J. Parbrook; H. Geaney; C.O¿Dwyer
    Department: Química Física i Inorgànica
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Publication Type: Article
    Last page: 176
    ISSN: 1938-5862
    Author, as appears in the article.: J. J. Carvajal; F. Díaz; M. Aguiló; J. Mena; O. V. Bilousov; O. Martínez; J. Jiménez; V.Z. Zubialevich; P.J. Parbrook; H. Geaney; C.O¿Dwyer
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    Journal volume: 66
    Research group: Física i Cristal·lografia de Nanomaterials, Física i Cristal.lografia de Materials
    Thematic Areas: Chemistry

  • Keywords:

    GaN based LED
    Semiconductor devices
    Chemical vapor depositions (CVD)

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