Author, as appears in the article.: J. J. Carvajal; F. Díaz; M. Aguiló; J. Mena; O. V. Bilousov; O. Martínez; J. Jiménez; V.Z. Zubialevich; P.J. Parbrook; H. Geaney; C.O¿Dwyer
Department: Química Física i Inorgànica
URV's Author/s: CARVAJAL MARTÍ, JOAN JOSEP; DÍAZ GONZÁLEZ, FRANCISCO MANUEL; AGUILÓ DÍAZ, MAGDALENA; J. Mena; O. V. Bilousov; O. Martínez; J. Jiménez; V.Z. Zubialevich; P.J. Parbrook; H. Geaney; C.O¿Dwyer
Keywords: GaN based LED Semiconductor devices Chemical vapor depositions (CVD)
Abstract: Porous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extraction efficiencies in th epast. However, these fabrication techniques require further postgrowth processing steps, which increase the price of the final device. In this paper, we review the process we developed for the formation of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD)
process to produce the different layers that form the p-n junction.
Research group: Física i Cristal·lografia de Nanomaterials Física i Cristal.lografia de Materials
Thematic Areas: Chemistry Química Química
licence for use: https://creativecommons.org/licenses/by/3.0/es/
ISSN: 1938-5862
Author identifier: 0000-0002-4389-7298; 0000-0003-4581-4967; 0000-0001-6130-9579; 2; 3; 4; 5; 6; 7; 8; 9
Record's date: 2017-05-31
Last page: 176
Journal volume: 66
Papper version: info:eu-repo/semantics/acceptedVersion
Link to the original source: https://iopscience.iop.org/article/10.1149/06601.0163ecst
Funding program: altres; JCYL (VA293U13) altres; Grupos consolidados; 2014SGR1358 plan; RETOS; MAT2013-47395-C4-4-R plan; Excelencia; MAT2011-29255-C02-02
Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
Article's DOI: 10.1149/06601.0163ecst
Entity: Universitat Rovira i Virgili
Journal publication year: 2015
First page: 163
Publication Type: Article Artículo Article
Repositori URV