Author, as appears in the article.: Roemer C; Darbandy G; Schwarz M; Trommer J; Heinzig A; Mikolajick T; Weber WM; Iniguez B; Kloes A
Department: Enginyeria Electrònica, Elèctrica i Automàtica
URV's Author/s: Iñiguez Nicolau, Benjamin
Keywords: Tunneling current. Tunneling Transistors Thermionic emission Silicon-nanowire transistors Schottky barriers Schottky barrier Sbfet Rfet Mathematical models Logic gates Junctions Field emission Electric potential Compact modeling Closed-form tunneling current tunneling transistors thermionic emission schottky barriers schottky barrier sbfet rfet mathematical models junctions field emission electric potential compact modeling closed-form
Abstract: A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection over the Schottky barriers. This current is separated into a field emission current, given by charge carriers tunneling through the Schottky barriers and a thermionic emission current, given by charge carriers overcoming the Schottky barriers. The model verification is done by comparing the model results to measurements and TCAD simulations.
Thematic Areas: Engineering, electrical & electronic Electronic, optical and magnetic materials Electrical and electronic engineering Biotechnology
licence for use: https://creativecommons.org/licenses/by/3.0/es/
Author's mail: benjamin.iniguez@urv.cat
Author identifier: 0000-0002-6504-7980
Record's date: 2024-09-07
Papper version: info:eu-repo/semantics/publishedVersion
Link to the original source: https://ieeexplore.ieee.org/document/9657073
Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
Papper original source: Ieee Journal Of The Electron Devices Society. 10 416-423
APA: Roemer C; Darbandy G; Schwarz M; Trommer J; Heinzig A; Mikolajick T; Weber WM; Iniguez B; Kloes A (2022). Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors. Ieee Journal Of The Electron Devices Society, 10(), 416-423. DOI: 10.1109/JEDS.2021.3136981
Article's DOI: 10.1109/JEDS.2021.3136981
Entity: Universitat Rovira i Virgili
Journal publication year: 2022
Publication Type: Journal Publications
Repositori URV