Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors

  • Identification data

    Identifier: imarina:9243274
    Handle: https://hdl.handle.net/20.500.11797/imarina9243274
    Authors:
    Roemer CDarbandy GSchwarz MTrommer JHeinzig AMikolajick TWeber WMIniguez BKloes A
    Abstract:
    A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection over the Schottky barriers. This current is separated into a field emission current, given by charge carriers tunneling through the Schottky barriers and a thermionic emission current, given by charge carriers overcoming the Schottky barriers. The model verification is done by comparing the model results to measurements and TCAD simulations.

  • Others:

    Author, as appears in the article.: Roemer C; Darbandy G; Schwarz M; Trommer J; Heinzig A; Mikolajick T; Weber WM; Iniguez B; Kloes A
    Department: Enginyeria Electrònica, Elèctrica i Automàtica
    URV's Author/s: Iñiguez Nicolau, Benjamin
    Keywords: Tunneling current. Tunneling Transistors Thermionic emission Silicon-nanowire transistors Schottky barriers Schottky barrier Sbfet Rfet Mathematical models Logic gates Junctions Field emission Electric potential Compact modeling Closed-form tunneling current tunneling transistors thermionic emission schottky barriers schottky barrier sbfet rfet mathematical models junctions field emission electric potential compact modeling closed-form
    Abstract: A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection over the Schottky barriers. This current is separated into a field emission current, given by charge carriers tunneling through the Schottky barriers and a thermionic emission current, given by charge carriers overcoming the Schottky barriers. The model verification is done by comparing the model results to measurements and TCAD simulations.
    Thematic Areas: Engineering, electrical & electronic Electronic, optical and magnetic materials Electrical and electronic engineering Biotechnology
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    Author's mail: benjamin.iniguez@urv.cat
    Author identifier: 0000-0002-6504-7980
    Record's date: 2024-09-07
    Papper version: info:eu-repo/semantics/publishedVersion
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Papper original source: Ieee Journal Of The Electron Devices Society. 10 416-423
    APA: Roemer C; Darbandy G; Schwarz M; Trommer J; Heinzig A; Mikolajick T; Weber WM; Iniguez B; Kloes A (2022). Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors. Ieee Journal Of The Electron Devices Society, 10(), 416-423. DOI: 10.1109/JEDS.2021.3136981
    Entity: Universitat Rovira i Virgili
    Journal publication year: 2022
    Publication Type: Journal Publications

  • Keywords:

    Biotechnology,Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Engineering, Electrical & Electronic
    Tunneling current.
    Tunneling
    Transistors
    Thermionic emission
    Silicon-nanowire transistors
    Schottky barriers
    Schottky barrier
    Sbfet
    Rfet
    Mathematical models
    Logic gates
    Junctions
    Field emission
    Electric potential
    Compact modeling
    Closed-form
    tunneling current
    tunneling
    transistors
    thermionic emission
    schottky barriers
    schottky barrier
    sbfet
    rfet
    mathematical models
    junctions
    field emission
    electric potential
    compact modeling
    closed-form
    Engineering, electrical & electronic
    Electronic, optical and magnetic materials
    Electrical and electronic engineering
    Biotechnology

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