Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors

Identifier:  imarina:9243274

Handle: https://hdl.handle.net/20.500.11797/imarina9243274

Authors:  Roemer, Christian; Darbandy, Ghader; Schwarz, Mike; Trommer, Jens; Heinzig, Andre; Mikolajick, Thomas; Weber, Walter M; Iniguez, Benjamin; Kloes, Alexander

Abstract:
A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection over the Schottky barriers. This current is separated into a field emission current, given by charge carriers tunneling through the Schottky barriers and a thermionic emission current, given by charge carriers overcoming the Schottky barriers. The model verification is done by comparing the model results to measurements and TCAD simulations.