Author, as appears in the article.: Benjamin Iñiguez
Department: Enginyeria Electrònica, Elèctrica i Automàtica
URV's Author/s: Iñiguez Nicolau, Benjamin
licence for use: https://creativecommons.org/licenses/by/3.0/es/
Author's mail: benjamin.iniguez@urv.cat
Author identifier: 0000-0002-6504-7980
Record's date: 2024-03-01
Papper version: info:eu-repo/semantics/acceptedVersion
Link to the original source: https://ieeexplore.ieee.org/document/9520649
Papper original source: 12th International Conference On Computer-Aided Design For Thin Film Transistor Technologies (Cad-Tft 2021).
APA: Benjamin Iñiguez (2021). Compact Modeling Approaches for Organic and Amorphous Oxide Semiconductor TFTs.
Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
Article's DOI: 10.1109/JEDS.2021.3106836.hal-03325532
Entity: Universitat Rovira i Virgili
Journal publication year: 2021
Publication Type: Proceedings Paper