Autor según el artículo: Nikolaou A; Leise J; Pruefer J; Zschieschang U; Klauk H; Darbandy G; Iniguez B; Kloes A

Departamento: Enginyeria Electrònica, Elèctrica i Automàtica

e-ISSN: 1557-9646

Autor/es de la URV: Iñiguez Nicolau, Benjamin

Palabras clave: Verilog-a Variability Transistors Threshold voltage Thin-film transistors Thin-film transistor Thin film transistors Organic circuits. Organic circuits Noise Monte carlo methods Monte carlo analysis Model Logic gates Integrated circuit modeling Hardware design languages Compact modeling

Resumen: CCBY An accurate and efficient noise-based simulation technique for predicting the impact of device-parameter variability on the DC statistical behavior of integrated circuits is presented. The proposed method is validated on a source follower, a diode-load inverter and a current mirror based on organic thin-film transistors. Taking advantage of the standard noise analysis of a circuit, after translating the statistical variation of the electrical parameters of the transistors into equivalent-noise circuit components, the proposed technique yields results identical to those obtained from a Monte Carlo simulation, but in a significantly shorter amount of time.

Áreas temáticas: Engineering, electrical & electronic Electronic, optical and magnetic materials Electrical and electronic engineering Biotechnology

Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/

ISSN: 0018-9383

Direcció de correo del autor: benjamin.iniguez@urv.cat

Identificador del autor: 0000-0002-6504-7980

Fecha de alta del registro: 2023-02-19

Versión del articulo depositado: info:eu-repo/semantics/publishedVersion

Enlace a la fuente original: https://ieeexplore.ieee.org/document/9302569

URL Documento de licencia: http://repositori.urv.cat/ca/proteccio-de-dades/

Referencia al articulo segun fuente origial: Ieee Journal Of The Electron Devices Society. 9 450-455

Referencia de l'ítem segons les normes APA: Nikolaou A; Leise J; Pruefer J; Zschieschang U; Klauk H; Darbandy G; Iniguez B; Kloes A (2021). Noise-Based Simulation Technique for Circuit-Variability Analysis. Ieee Journal Of The Electron Devices Society, 9(), 450-455. DOI: 10.1109/JEDS.2020.3046301

DOI del artículo: 10.1109/JEDS.2020.3046301

Entidad: Universitat Rovira i Virgili

Año de publicación de la revista: 2021

Tipo de publicación: Journal Publications