Tesis doctoralsDepartament d'Enginyeria Electrònica, Elèctrica i Automàtica

Compact modeling of gate tunneling leakage current in advanced nanoscale soi mosfets

  • Identification data

    Identifier:  TDX:1152
    Handle: https://hdl.handle.net/20.500.11797/TDX1152
    Authors:  Darbandy, Ghader

  • Others:

    Date: 2012-12-10; 2013-01-15T11:05:30Z; 2013-01-15T11:05:30Z
    Departament/Institute: Departament d'Enginyeria Electrònica, Elèctrica i Automàtica; Universitat Rovira i Virgili.
    Language: eng
    Identifier: T.59-2013; http://hdl.handle.net/10803/97215
    Source: TDX (Tesis Doctorals en Xarxa)
    Author: Darbandy, Ghader
    Director: Íñiguez Nicolau, Benjamí
    Format: application/pdf; application/pdf; 149 p.
    Publisher: Universitat Rovira i Virgili
    Keywords: Compact modeling of gate tunneling leakage current in advanced nanoscale soi mosfets
    Title: Compact modeling of gate tunneling leakage current in advanced nanoscale soi mosfets
    Subject: 621.3; Compact modeling of gate tunneling leakage current in advanced nanoscale soi mosfets

  • Keywords:

    621.3
    Compact modeling of gate tunneling leakage current in advanced nanoscale soi mosfets

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