Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors

Identifier:  TDX:4406

Handle: https://hdl.handle.net/20.500.11797/TDX4406

Authors:  Römer, Christian

Abstract:
Schottky barrier field-effect transistors (SBFETs) and other devices based on Schottky barrier formation are a stable but also a niche technology in electronic applications. However, SBFETs and other devices based on this technology are still promising for a wide spectrum of future applications. While in recent research SBFETs have been proven to be a good candidate for deep cryogenic temperature applications, new type of devices like the reconfigurable field-effect transistor (RFET) which use and improve several characteristics of SBFETs are currently under investigation. In this work a physics-based and closed-form compact model is derived which is used to calculate the DC current of SBFETs. The presented compact model comes with different variations and can be used for room temperature and for deep cryogenic temperature environmental applications. The model can be applied to regular SBFETs, as well as to programmed RFETs. In addition, the DC compact model includes several second order effects like channel resistance in RFETs and the band tail effect at deep cryogenic temperatures. The model verification is done on measurements of the devices and on numerical TCAD simulations, performed with TCAD Sentaurus.